DESIGN AND PERFORMANCE OF SEMICONDUCTOR-DETECTORS WITH INTEGRATED AMPLIFICATION AND CHARGE STORAGE CAPABILITY

Prototypes demonstrating a new detector-amplification principle, first proposed by Kemmer and Lutz in 1986, have been realized and tested. They consist of a MOSFET on a depleted substrate: the most important features of the structures are built-in amplification, charge storage capability and the possibility of nondestructive readout. Different prototype designs are compared with regard to their noise characteristics. Also an 8 X 8 pixel device prototype, allowing random access readout and a variation of the pixel size, has been proven to work. As a structure consisting of a JFET on a depleted bulk has a higher radiation hardness and lower figures for flicker noise, a design proposal for such a device is given.