PREPARATION AND CHARACTERIZATION OF REACTIVELY SPUTTERED SICXNY FILMS

被引：29

作者：

KOMATSU, S ^{[1
]}

HIROHATA, Y ^{[1
]}

FUKUDA, S ^{[1
]}

HINO, T ^{[1
]}

YAMASHINA, T ^{[1
]}

HATA, T ^{[1
]}

KUSAKABE, K ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,DIV CERAM,KADOMA,OSAKA 571,JAPAN

来源：

THIN SOLID FILMS | 1990年 / 193卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(90)90245-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon-carbide-nitride films with different atomic contents were prepared by adjusting the nitrogen gas flow rate in a magnetron-sputtering apparatus. The surface electrical resistivity measured by the two-ring probe method increased exponentially with nitrogen content. X-ray photoelectron spectroscopy analysis showed that the electrical resistivity was enhanced by the formation of Si-N bonding. Crystalline structure in the X-ray diffraction pattern was observed only for the film produced on substrate heated at high temperature and with low nitrogen content. The electrical resistivity of the film with lower nitrogen content was observed to increase with increasing substrate temperature.

引用

页码：917 / 923

页数：7