CONFINEMENT OF EXCITONS IN QUANTUM DOTS

被引：173

作者：

EINEVOLL, GT ^{[1
]}

机构：

[1] UNIV TRONDHEIM,NORGES TH,INST FYS,N-7034 TRONDHEIM,NORWAY

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.45.3410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theoretical study of exciton confinement in small CdS and ZnS quantum dots is reported. In our calculational scheme the hole is described by an effective bond-orbital model that accounts for the valence-band degeneracy in bulk semiconductors. The electron is described with a single-band effective-mass approximation. The confining quantum-dot potentials for the hole and electron are modeled as spherically symmetric potential wells with finite barrier heights. The electron-hole Coulomb attraction is included and exciton energies are obtained variationally in an iterative Hartree scheme. Exciton energies for dot diameters in the range 10-80 angstrom are calculated and compared with experimental data and other theoretical results.

引用

页码：3410 / 3417

页数：8

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