TEMPERATURE-DEPENDENCE OF RESISTIVITY AND HALL-MOBILITY IN FLOATING ZONE GROWN BULK SILICON-GERMANIUM ALLOYS

Silicon germanium (Si1-xGex) alloys have been grown by the floating zone method with x varying from 0.5 to 20 wt %. Resistivity and Hall effect measurements have been carried out in the temperature range 80-410 K. The Hall mobility has been found to decrease with Ge concentration varying between 0.5 and 4.5 wt % and thereafter an increase has been observed. The Hall mobility has also been found to decrease with an increase in temperature in these alloys following the AT(-y) relation, where A is a constant and T is the temperature in K.