PERSISTENT CURRENTS IN AN INTERACTING 1D DISORDERED RING - MANIFESTATIONS OF THE MOTT-HUBBARD TRANSITION

被引：150

作者：

ABRAHAM, M

BERKOVITS, R

机构：

[1] Jack and Pearl Resnick Institute for Advanced Technology, Department of Physics, Bar-Ilan University

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.70.1509

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present an exact calculation of the persistent current in interacting disordered 1D rings. This system exhibits a variety of interesting behaviors depending on the disorder and the strength of electron-electron interactions. We find that even for the disordered case the current at high values of interactions is strongly suppressed due to the Mott-Hubbard metal-insulator transition. We observe that no dramatic increase of the averaged current or its rms value as a result of interactions is possible for these systems.

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页码：1509 / 1512

页数：4

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