ELASTIC ANHARMONICITY OF INP - ITS RELATIONSHIP TO THE HIGH-PRESSURE TRANSITION

[1] PIEZOELECTRIC CONSTANT AND CONDUCTIVITY RELAXATION IN N-TYPE INP FROM ULTRASONIC-ATTENUATION MEASUREMENTS [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (03) : 323 - 326

[2] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[3] Demarest H., 1977, HIGH PRESSURE RES, P281

[4] 3RD-ORDER ELASTIC CONSTANTS OF INDIUM ANTIMONIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 91 (574P): : 959 - &

[5] GERLICH D, 6TH P S THERM PROP A, P305

[6] ELASTIC CONSTANTS OF SINGLE-CRYSTAL INDIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 462 - +

[7] ELASTIC WAVE PROPAGATION IN PIEZOELECTRIC SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) : 40 - &

[8] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 4005 - +

[9] PRESSURE-DEPENDENCE OF THE ELECTRICAL-RESISTIVITY AND THE IONIZATION-ENERGY OF CR IN NORMAL-TYPE INP [J]. SOLID STATE COMMUNICATIONS, 1980, 34 (08) : 621 - 623

[10] Peresada G. I., 1972, Soviet Physics - Solid State, V14, P1546

[1] PIEZOELECTRIC CONSTANT AND CONDUCTIVITY RELAXATION IN N-TYPE INP FROM ULTRASONIC-ATTENUATION MEASUREMENTS [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (03) : 323 - 326

[2] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[3] Demarest H., 1977, HIGH PRESSURE RES, P281

[4] 3RD-ORDER ELASTIC CONSTANTS OF INDIUM ANTIMONIDE [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 91 (574P): : 959 - &

[5] GERLICH D, 6TH P S THERM PROP A, P305

[6] ELASTIC CONSTANTS OF SINGLE-CRYSTAL INDIUM PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 462 - +

[7] ELASTIC WAVE PROPAGATION IN PIEZOELECTRIC SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (01) : 40 - &

[8] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10): : 4005 - +

[9] PRESSURE-DEPENDENCE OF THE ELECTRICAL-RESISTIVITY AND THE IONIZATION-ENERGY OF CR IN NORMAL-TYPE INP [J]. SOLID STATE COMMUNICATIONS, 1980, 34 (08) : 621 - 623

[10] Peresada G. I., 1972, Soviet Physics - Solid State, V14, P1546