BSCCO-2212 THICK-FILMS ON A FLEXIBLE YSZ SUBSTRATE

被引:5
作者
CHEN, SJ [1 ]
PATEL, S [1 ]
NARUMI, E [1 ]
SHAW, DT [1 ]
STJULIEN, D [1 ]
KETCHAM, TD [1 ]
机构
[1] CORNING INC, CORNING, NY 14831 USA
来源
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1993年 / 218卷 / 1-2期
关键词
D O I
10.1016/0921-4534(93)90282-U
中图分类号
O59 [应用物理学];
学科分类号
摘要
The potential use of flexible YSZ as a substrate material for the partial-melt growth, PMG, of Bi-2212 thick films was studied. Results show low critical temperatures, T(c), ( < 50 K) and degradation in the flexibility of the YSZ due to inter-diffusion. The T(c) was significantly improved ( > 80 K) when Ag was used as a buffer layer. The optimum peak processing temperatures were found to decrease with increasing buffer-layer thickness. The critical current density, J(c), also improved with increasing buffer-layer thickness. The self-field J(c) of these Bi-2212/Ag/YSZ composites was 1-3 x 10(3) A/CM2 at 20 K, significantly lower than that for the Bi-2212/Ag tapes. However, the present study strongly supports the viability of using flexible YSZ with an appropriate buffer in the wind-and-react fabrication of high-T(c) pancake coils. The microstructure and transport properties of Bi-2212/YSZ and Bi-2212/Ag/YSZ composite structures will be discussed.
引用
收藏
页码:191 / 196
页数:6
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