SATURATED RESISTOR LOAD FOR GAAS INTEGRATED-CIRCUITS

被引：7

作者：

LEE, CP

WELCH, BM

ZUCCA, R

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1982年 / 30卷 / 07期

关键词：

D O I：

10.1109/TMTT.1982.1131190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1007 / 1013

页数：7

共 13 条

[1]

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[4]

Lee C., UNPUB

[5]

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[8]

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[9] DEGRADATION MECHANISM OF GAAS-MESFETS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1008-1014

[10] THE THERMAL-STABILITY OF THIN-LAYER TRANSITION AND REFRACTORY METALLIZATIONS ON GAAS [J].

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SMITH, JG .

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