MEASUREMENT OF MINORITY-CARRIER LIFETIME AND DIFFUSION LENGTH IN SILICON EPITAXIAL LAYERS BY MEANS OF PHOTOCURRENT TECHNIQUE

被引：12

作者：

MULLER, J

BERNT, H

REICHL, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 08期

关键词：

D O I：

10.1016/0038-1101(78)90175-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：999 / 1003

页数：5

共 16 条

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[9] LIFETIME MEASUREMENTS IN SILICON EPITAXIAL MATERIALS [J].

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