STRESS-INDUCED LEAKAGE CURRENTS IN THIN OXIDES

被引：28

作者：

DIMARIA, DJ

机构：

[1] IBM T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

Electron trap - Thin oxides;

D O I：

10.1016/0167-9317(95)00016-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Leakage currents introduced in the low-field, direct-tunneling regime of thin silicon dioxide layers after high-field stress are related to defects produced by hot electron transport in the oxide layer. From these studies, it is concluded that the ''generation'' of neutral electron traps in thin oxides are the dominant cause of this phenomenon.

引用

页码：63 / 66

页数：4

共 9 条

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