SINGLE-CRYSTALLINE GASE/WSE2 HETEROINTERFACES GROWN BY VAN-DER-WAALS EPITAXY .1. GROWTH-CONDITIONS

被引：62

作者：

LANG, O

SCHLAF, R

TOMM, Y

PETTENKOFER, C

JAEGERMANN, W

机构：

[1] Hahn-Meitner-Institute, Abteilung Grentflächen, 14109 Berlin

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 12期

关键词：

D O I：

10.1063/1.356562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial GaSe films have been prepared on WSe2 (0001) substrates with 14% lattice mismatch and characterized by photoelectron spectroscopy, electron diffraction, and ex situ by tunneling microscopy. The films grow in the Frank-van der Merve growth mode. The best films with perfect azimuthal orientation are formed after an annealing step at 720 K. The basic mechanisms of this van der Waals epitaxy are qualitatively discussed in terms of thermodynamic and kinetic parameters.

引用

页码：7805 / 7813

页数：9

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