NEW MECHANISM FOR SI INCORPORATION IN GAAS-ON-SI HETEROEPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：15

作者：

NOZAKI, S

MURRAY, JJ

WU, AT

GEORGE, T

WEBER, ER

UMENO, M

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

[2] NAGOYA INST TECHNOL,NAGOYA,AICHI 466,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 16期

关键词：

D O I：

10.1063/1.102232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1674 / 1676

页数：3

共 5 条

[1] DEFECT-RELATED SI DIFFUSION IN GAAS ON SI [J].

FREUNDLICH, A ;

LEYCURAS, A ;

GRENET, JC ;

GRATTEPAIN, C .

APPLIED PHYSICS LETTERS, 1988, 53 (26) :2635-2637

[2]

NOZAKI S, 1989, INFORMATION COMMUNIC, V89, P7

[3]

NOZAKI S, UNPUB

[4] HETEROINTERFACE STABILITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

PEARTON, SJ ;

MALM, DL ;

HEIMBROOK, LA ;

KOVALCHICK, J ;

ABERNATHY, CR ;

CARUSO, R ;

VERNON, SM ;

HAVEN, VE .

APPLIED PHYSICS LETTERS, 1987, 51 (09) :682-684

[5] ACTIVATION CHARACTERISTICS AND DEFECT STRUCTURE IN SI-IMPLANTED GAAS-ON-SI [J].

VERNON, SM ;

PEARTON, SJ ;

GIBSON, JM ;

SHORT, KT ;

HAVEN, VE .

APPLIED PHYSICS LETTERS, 1987, 50 (17) :1161-1163

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