THERMAL-STABILITY OF SILICIDE CONTACTS ON GAAS USING THE PROXIMITY TECHNIQUE DURING RAPID THERMAL ANNEALING

被引：23

作者：

EFTEKHARI, G

机构：

[1] Dept. of Electr. Eng., State Univ. of New York, NY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 03期

关键词：

D O I：

10.1088/0268-1242/6/3/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The proximity technique (face-to-face) has been used for annealing of WSi0.6 and TiSi2 contacts on GaAs. This technique eliminates the need for encapsulation of GaAs or As overpressure. The contacts were stable up to an annealing temperature of 900-degrees-C with little degradation of electrical properties. The Richardson constant decreased sharply at high annealing temperature which may have been due to creation of defects at the interface.

引用

页码：193 / 195

页数：3

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