BEHAVIOR OF THRESHOLD CURRENT AND POLARIZATION OF STIMULATED EMISSION OF GAAS INJECTION LASERS UNDER UNIAXIAL STRESS

被引：42

作者：

PATEL, NB ^{[1
]}

RIPPER, JE ^{[1
]}

BROSSON, P ^{[1
]}

机构：

[1] UNIV ESTADUAL CAMPINAS,INST FIS GLEB WATAGHIN,CAMPINAS,BRAZIL

来源：

关键词：

D O I：

10.1109/JQE.1973.1077461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：338 / 341

页数：4

共 8 条

[1] IKEGAMI T, 1972, IEEE J QUANTUM ELECT, VQE 8, P470
[2] PIEZO-ELECTROREFLECTANCE IN GE GAAS AND SI
POLLAK, FH
CARDONA, M
[J]. PHYSICAL REVIEW, 1968, 172 (03): : 816 - &
[3] POLLAK FH, 1970, 10 P INT C PHYS SEM, P407
[4] MODE REFLECTIVITY ANS WAVEGUIDE PROPERTIES OF DOUBLE-HETEROSTRUCTUREINJECTION LASERS
REINHART, FK
HAYASHI, I
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4466 - &
[5] EFFECT OF UNIAXIAL PRESSURE ON THRESHOLD CURRENT OF DOUBLE-HETEROSTRUCTURE GAAS LASERS
RIPPER, JE
BROSSON, P
PATEL, NB
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (04) : 124 - &
[6] RIPPER JE, TO BE PUBLISHED
[7] THE EFFECT OF UNIAXIAL STRAIN ON THE THRESHOLD CURRENT AND OUTPUT OF GAAS LASERS
RYAN, FM
MILLER, RC
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (09) : 162 - 163
[8] SUZUKI K, 1969, B AM PHYS SOC, V14, P113