CRYSTAL-GROWTH AND ELECTRICAL-PROPERTIES OF CUFEO2 SINGLE-CRYSTALS

被引:78
作者
DORDOR, P [1 ]
CHAMINADE, JP [1 ]
WICHAINCHAI, A [1 ]
MARQUESTAUT, E [1 ]
DOUMERC, JP [1 ]
POUCHARD, M [1 ]
HAGENMULLER, P [1 ]
机构
[1] UNIV CADI AYYAD,FAC SCI,CHIM SOLIDE MINERAL LAB,MARRAKECH,MOROCCO
关键词
ACTIVATION ENERGY - DELAFOSSITE STRUCTURE - ENERGY GAP VALUE - FLUX METHOD;
D O I
10.1016/0022-4596(88)90307-6
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
(Edited Abstract)
引用
收藏
页码:105 / 112
页数:8
相关论文
共 10 条
[1]  
AMMAR A, 1986, CR ACAD SCI II, V303, P353
[2]   OPTOELECTRONIC PROPERTIES OF PARA-TYPE AND NORMAL-TYPE DELAFOSSITE, CUFEO2 [J].
BENKO, FA ;
KOFFYBERG, FP .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1987, 48 (05) :431-434
[3]  
BUIST DS, 1966, MINERAL MAG, V35, P732
[4]   AUTOMATIC EQUIPMENT FOR RESISTIVITY MEASUREMENTS BETWEEN 4-K AND 1 100-K [J].
DORDOR, P ;
MARQUESTAUT, E ;
SALDUCCI, C ;
HAGENMULLER, P .
REVUE DE PHYSIQUE APPLIQUEE, 1985, 20 (11) :795-799
[5]   SOME NEW COMPOUNDS WITH DELAFOSSITE STRUCTURE [J].
DOUMERC, JP ;
AMMAR, A ;
WICHAINCHAI, A ;
POUCHARD, M ;
HAGENMULLER, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1987, 48 (01) :37-43
[6]   ON MAGNETIC-PROPERTIES OF SOME OXIDES WITH DELAFOSSITE-TYPE STRUCTURE [J].
DOUMERC, JP ;
WICHAINCHAI, A ;
AMMAR, A ;
POUCHARD, M ;
HAGENMULLER, P .
MATERIALS RESEARCH BULLETIN, 1986, 21 (06) :745-752
[7]   METHOD FOR MEASURING ELECTRICAL RESISTIVITY OF ANISOTROPIC MATERIALS [J].
MONTGOMERY, HC .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2971-+
[8]  
PREWITT CT, 1971, INORG CHEM, V10, P719
[9]  
ROGERS DB, 1971, INORG CHEM, V10, P723
[10]   GROWTH AND MICROSTRUCTURAL CONTROL OF SINGLE-CRYSTAL CUPROUS-OXIDE CU2O [J].
SCHMIDTW.RD ;
MARTINEZ.M .
JOURNAL OF CRYSTAL GROWTH, 1974, 23 (02) :113-120