DETERMINATION OF MOS FLATBAND CONDITION BY ELECTROREFLECTANCE AND CAPACITANCE MEASUREMENTS

被引：8

作者：

HOLTZ, F

机构：

[1] TECH UNIV MUNICH,FAK ALLGEMEINEN WISSENSCH,MUNICH,WEST GERMANY

[2] SIEMENS AG,FORSCH LAB,MUNICH,WEST GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 21卷 / 02期

关键词：

D O I：

10.1002/pssa.2210210211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：469 / 478

页数：10

共 10 条

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FROVA, A
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[2] IMPURITY REDISTRIBUTION AND JUNCTION FORMATION IN SILICON BY THERMAL OXIDATION
ATALLA, MM
TANNENBAUM, E
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (04): : 933 - 946
[3] BACCARANI G, 1971, ALTA FREQUENZA, V40, pE674
[4] CARDONA M, 1969, SOLID STATE PHYS S, V11
[5] FAHRNER W, TO BE PUBLISHED
[6] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[7] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV
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TAFT, EA
[J]. PHYSICAL REVIEW, 1960, 120 (01): : 37 - 38
[8] OPTICAL FIELD EFFECT IN SILICON
SERAPHIN, BO
[J]. PHYSICAL REVIEW, 1965, 140 (5A): : 1716 - &
[9] SPENKE E, 1965, ELEKTRONISCHE HALBLE, pCH8
[10] ZERBST M, 1965, Z ANGEW PHYSIK, V19, P85