ELECTRONIC-STRUCTURE OF INTENTIONALLY DISORDERED ALGS/GAAS SUPERLATTICES

被引：49

作者：

MADER, KA

WANG, LW

ZUNGER, A

机构：

[1] National Renewable Energy Laboratory, Golden

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.74.2555

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We use realistic pseudopotentials and a plane-wave basis to study the electronic structure of nonperiodic, three-dimensional, 2000-atom (AlAs)n/(GaAs)m (001) superlattices, where the individual layer thicknesses n,m{1,2,3} are randomly selected. We find that while the band gap of the equivalent (n=m=2) ordered superlattice is indirect, random fluctuations in layer thicknesses lead to a direct gap in the planar Brillouin zone, strong wave function localization along the growth direction, short radiative lifetimes, and a significant band-gap reduction, in agreement with experiments on such intentionally grown disordered superlattices. © 1995 The American Physical Society.

引用

页码：2555 / 2558

页数：4

共 16 条

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