VAPOR GROWTH OF CDTE AS SUBSTRATE MATERIAL FOR HG1-XCDXTE EPITAXY

被引：9

作者：

GEIBEL, C

MAIER, H

SCHMITT, R

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90748-A

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：386 / 390

页数：5

相关论文

共 6 条

[1] SUBLIMATION GROWTH AND X-RAY TOPOGRAPHIC CHARACTERIZATION OF CDTE SINGLE-CRYSTALS [J].

BUCK, P ;

NITSCHE, R .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (01) :29-33

[2]

GEIBEL C, 1986, SPIE P, V659, P110

[3] TRANSITION RESISTANCES OF OHMIC CONTACTS TO P-TYPE CDTE AND THEIR TIME-DEPENDENT VARIATION [J].

JAEGER, H ;

SEIPP, E .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :605-618

[4] LUMINESCENCE INVESTIGATION OF COPPER DIFFUSION INTO CADMIUM TELLURIDE [J].

JAMES, KM ;

FLOOD, JD ;

MERZ, JL ;

JONES, CE .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) :3596-3598

[5] OHMIC CONTACTS TO P-TYPE CADMIUM TELLURIDE AND CADMIUM MERCURY TELLURIDE [J].

JANIK, E ;

TRIBOULET, R .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1983, 16 (12) :2333-2340

[6] OBSERVATION OF DISLOCATIONS IN CADMIUM TELLURIDE BY CATHODOLUMINESCENCE MICROSCOPY [J].

NAKAGAWA, K ;

MAEDA, K ;

TAKEUCHI, S .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :574-575