METAL-NONMETAL TRANSITION IN AMORPHOUS SI-AU SYSTEM AT LOW-TEMPERATURES - MEASUREMENTS OF ELECTRICAL-CONDUCTIVITY AND THERMOELECTRIC-POWER

被引:23
作者
KISHIMOTO, N [1 ]
MORIGAKI, K [1 ]
机构
[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 106,JAPAN
关键词
D O I
10.1143/JPSJ.46.846
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Metal-nonmetal transition in amorphous Si-Au system has been investigated by means of electrical conductivity and thermoelectric power. It is found that the Au atoms act as acceptors and form a narrow band in pseudo-gap of amorphous Si. The metal-nonmetal transition occurs at x=14% and is assigned to the Anderson transition. In the nonmetallic region, the transport is dominated by the variable range hopping conduction in the lower temperature range and by the ambipolar conduction in the host band in the higher temperature range. © 1979, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.
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页码:846 / 854
页数:9
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