IONICITY EFFECTS ON DEFECTS IN CHALCOGENIDE ALLOYS

被引:47
作者
STREET, RA
LUCOVSKY, G
机构
[1] Xerox Palo Alto Research Center Palo Alto
关键词
D O I
10.1016/0038-1098(79)90540-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The ionicity of compound chalcogenide and oxide glasses can modify the defect properties. Charged, valence alternation defects remain, but may not have a negative correlation energy because interconversion of positive and negative defects is inhibited. This property substantially changes the electronic behavior. The experimental evidence indicates that defects of this type occur in GeSe2 and SiO2 glasses, but not in As2Se3. © 1979.
引用
收藏
页码:289 / 293
页数:5
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