MOVPE GROWTH OF WIDE BANDGAP II-VI MATERIALS

An account of the recent progress in metalorganic vapor phase epitaxy (MOVPE) of wide bandgap II-VI compounds, ZnSe, ZnS and their alloys, is presented on the basis of the works performed in the author's research group over the past few years. The topics discussed include (1) growth considerations for obtaining high quality epitaxial layers such as a suitable choice of source materials, photo-assisted low-temperature growth and a lattice match to the substrates, (2) impurity doping for achieving conductivity control and for introducing luminescence centers, and (3) potential device applications of the grown layers.