POTENTIALS AND DIRECT-CURRENT IN SI-(20 TO 40 A)SIO2-METAL STRUCTURES

被引：33

作者：

KAR, S

DAHLKE, WE

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 08期

关键词：

D O I：

10.1016/0038-1101(72)90023-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：869 / &

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共 6 条

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[2] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES
DEAL, BE
SNOW, EH
MEAD, CA
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &
[3] THEORY OF TUNNELING INTO INTERFACE STATES
FREEMAN, LB
DAHLKE, WE
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1483 - +
[4] METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES
KAR, S
DAHLKE, WE
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (09) : 401 - +
[5] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI
KAR, S
DAHLKE, WE
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 221 - +
[6] SZE SM, 1969, PHYSICS SEMICONDUCTO