THE RELIEF OF PSEUDOMORPHIC STRAIN IN EPILAYERS OF FCC STRUCTURES GROWN IN (110) ORIENTATION

被引:10
作者
PASHLEY, DW
机构
[1] Department of Materials, Imperial College of Science, Technology and Medicine, London, SW7 2AZ, South Kensington
来源
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1993年 / 67卷 / 06期
关键词
D O I
10.1080/01418619308225358
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The relief of pseudomorphic strain in (110) epitaxial epilayers of fc.c. structures is restricted by the orientation of the normal {111}[110] slip systems. Possible alternative relief mechanisms are discussed, and the consequences of the restriction are considered, especially in relation to the occurrence of anisotropic strain relief and one-dimensional pseudomorphism. These aspects are related to the occurrence of large-angle tilts of epilayers as reported by Flynn, and it is concluded that the tilts can be explained quantitatively in terms of misfit dislocations forming in (110) epilayers which exhibit one-dimensional pseudomorphism resulting from anisotropic strain relief.
引用
收藏
页码:1333 / 1346
页数:14
相关论文
共 10 条
[1]   RECENT ADVANCES IN EPITAXY [J].
BAUER, E ;
POPPA, H .
THIN SOLID FILMS, 1972, 12 (01) :167-+
[2]   MISFIT DISLOCATION SOURCES IN EPITAXIAL-FILMS .1. GROWTH OF PD ON AU(001) SUBSTRATES [J].
CHERNS, D ;
STOWELL, MJ .
THIN SOLID FILMS, 1975, 29 (01) :107-125
[3]   ASYMMETRIC COHERENT TILT BOUNDARIES FORMED BY MOLECULAR-BEAM EPITAXY [J].
DU, R ;
FLYNN, CP .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (05) :1335-1341
[4]  
DU RR, 1991, SURF SCI, V258, pL703, DOI 10.1016/0039-6028(91)90894-X
[5]  
FLYNN CP, 1991, MRS B JUN, P30
[6]  
HUANG JCA, PHYS REV B, V44, P4060
[7]   DEFECTS ASSOCIATED WITH ACCOMMODATION OF MISFIT BETWEEN CRYSTALS [J].
MATTHEWS, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01) :126-133
[8]   ACCOMMODATION OF MISFIT ACROSS INTERFACE BETWEEN SINGLE-CRYSTAL FILMS OF VARIOUS FACE-CENTRED CUBIC METALS [J].
MATTHEWS, JW .
PHILOSOPHICAL MAGAZINE, 1966, 13 (126) :1207-&
[9]  
PASHLEY DW, 1991, MATERIALS SCI TECHNO, V15, P289
[10]   THE ENERGY OF AN ARRAY OF DISLOCATIONS - IMPLICATIONS FOR STAIN RELAXATION IN SEMICONDUCTOR HETEROSTRUCTURES [J].
WILLIS, JR ;
JAIN, SC ;
BULLOUGH, R .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1990, 62 (01) :115-129