SPACE-CHARGE DOSIMETER - GENERAL PRINCIPLES OF A NEW METHOD OF RADIATION DETECTION

被引：160

作者：

HOLMESSI.A ^{[1
]}

机构：

[1] UNIV READING, JJ THOMSON PHYS LAB, READING RG6 2AF, ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS | 1974年 / 121卷 / 01期

关键词：

D O I：

10.1016/0029-554X(74)90153-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：169 / 179

页数：11

共 25 条

[1] METAL-OXIDE-SEMICONDUCTOR X-RAY DETECTORS [J].

CIARLO, DR ;

MAYEDA, K ;

BOSTER, TA ;

KALIBJIAN, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (01) :350-+

[2] CHARACTERISTICS OF THERMAL ANNEALING OF RADIATION DAMAGE IN MOSFETS [J].

DANCHENKO, V ;

DESAI, UD ;

BRASHEARS, SS .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2417-+

[3] A RADIATION-INDUCED INSTABILITY IN SILICON MOS TRANSISTORS [J].

DENNEHY, WJ ;

BRUCKER, GJ ;

HOLMESSI.AG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :273-&

[4] IRRADIATION EFFECTS IN BOROSILICATE GLASS [J].

GROSS, B .

PHYSICAL REVIEW, 1957, 107 (02) :368-373

[5] COMPTON CURRENT AND POLARIZATION IN GAMMA-IRRADIATED DIELECTRICS [J].

GROSS, B .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1635-&

[6]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[7] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J].

GWYN, CW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4886-+

[8]

HIPPEL AV, 1946, J CHEM PHYS, V14, P370

[9]

HIPPEL AV, 1953, PHYS REV, V91, P568

[10] PHYSICS OF FAILURE OF MIS DEVICES UNDER RADIATION [J].

HOLMESSIEDLE, AG ;

ZAININGER, KH .

IEEE TRANSACTIONS ON RELIABILITY, 1968, R 17 (01) :34-+

← 1 2 3 →