MG DIFFUSED ZINC PHOSPHIDE N/P JUNCTIONS

[1] POLYCRYSTALLINE ZN3P2 SCHOTTKY-BARRIER SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 39 - 41

[2] DEFECT DOMINATED CONDUCTIVITY IN ZN3P2 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1980, 41 (06) : 635 - 640

[3] EVIDENCE OF P-N HOMOJUNCTION FORMATION IN ZN3P2 [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 567 - 569

[4] CONVERS N, 1979, J APPL PHYS, V50, P1403

[5] OPTICAL-PROPERTIES OF ZN3P2 [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6505 - 6515

[6] Grove A.S., 1991, Physics and Technology of Semiconductor Devices, P388

[7] Hovel HaroldJ., 1975, Semiconductors and Semimetals: Solar cells, V2

[8] THE DESIGN AND UTILIZATION OF A MICROPROCESSOR-CONTROLLED ABSOLUTE SPECTRAL RESPONSE SYSTEM [J]. SOLAR CELLS, 1980, 1 (02): : 225 - 231

[9] LOFERSKI JJ, 1961, RCA REV, V22, P38

[10] EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3744 - &

[1] POLYCRYSTALLINE ZN3P2 SCHOTTKY-BARRIER SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 39 - 41

[2] DEFECT DOMINATED CONDUCTIVITY IN ZN3P2 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1980, 41 (06) : 635 - 640

[3] EVIDENCE OF P-N HOMOJUNCTION FORMATION IN ZN3P2 [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 567 - 569

[4] CONVERS N, 1979, J APPL PHYS, V50, P1403

[5] OPTICAL-PROPERTIES OF ZN3P2 [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6505 - 6515

[6] Grove A.S., 1991, Physics and Technology of Semiconductor Devices, P388

[7] Hovel HaroldJ., 1975, Semiconductors and Semimetals: Solar cells, V2

[8] THE DESIGN AND UTILIZATION OF A MICROPROCESSOR-CONTROLLED ABSOLUTE SPECTRAL RESPONSE SYSTEM [J]. SOLAR CELLS, 1980, 1 (02): : 225 - 231

[9] LOFERSKI JJ, 1961, RCA REV, V22, P38

[10] EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3744 - &