IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS

被引：17

作者：

RESTA, R ^{[1
]}

RESCA, L ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

PHYSICAL REVIEW B | 1979年 / 20卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.20.3254

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dispersive valence screening, described by the Resta model, is included in the Brooks-Herring theory of carrier mobility in semiconductors. Contrary to what has been reported to date, we find the effect of such a dispersive screening to be fairly small. Physical evidence is given for such a behavior. The reasons for the disagreement with the most recent literature are discussed. Correct numerical and analytical solutions are provided. © 1979 The American Physical Society.

引用

页码：3254 / 3257

页数：4

共 23 条

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[2] Brooks H., 1955, ADV ELECTRON, V7, P85
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[J]. INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 1978, 13 (02) : 221 - 226
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[8] DINGLE RB, 1955, PHILOS MAG, V46, P831
[9] MODEL DIELECTRIC FUNCTION FOR SEMICONDUCTORS
GRIMES, RD
COWLEY, ER
[J]. CANADIAN JOURNAL OF PHYSICS, 1975, 53 (23) : 2549 - 2554
[10] HERRING C, UNPUBLISHED

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