KINETICS OF DEPOSITION OF BISMUTH FILM BY A MOLECULAR-BEAM METHOD

被引：27

作者：

KAWAZU, A

SAITO, Y

OGIWARA, N

OTSUKI, T

TOMINAGA, G

机构：

[1] Department of Applied Physics, The University of Tokyo. 7-3-1, Hongo, Tokyo

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90385-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth processes of bismuth films on Si(111) surfaces were studied using quadrupole mass spectrometry, AES, and LEED. At higher substrate temperatures, the adsorption occurs only in a tightly bound state. The LEED pattern from these surfaces shows a Si(111) √3 × √3-30° -Bi structure. At lower temperatures, the orientation relationship of Bi(0001) ∥ Si(111) was observed for thick films. © 1979.

引用

页码：108 / 119

页数：12

共 12 条

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