METAL-INSULATOR-TRANSITION IN SOLID XENON AT HIGH-PRESSURES

被引：6

作者：

CHACHAM, H

ZHU, X

LOUIE, SG

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720

来源：

EUROPHYSICS LETTERS | 1991年 / 14卷 / 01期

关键词：

METAL-INSULATOR TRANSITIONS; BAND STRUCTURE OF CRYSTALLINE SEMICONDUCTOR COMPOUNDS AND INSULATORS; EXCHANGE; CORRELATION; DIELECTRIC AND MAGNETIC FUNCTIONS; PLASMONS;

D O I：

10.1209/0295-5075/14/1/012

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Under megabar pressures, solid h.c.p. xenon undergoes a metal-insulator transition without a concomitant structural phase transition. We have performed a first-principles quasi-particle calculation to investigate the properties of this transition resulting from the band gap closure. The theory places the transition pressure at 128 GPa. The many-body correction to the LDA band gap is found to decrease significantly as the pressure increases. This is tied with an increase of the dielectric screening.

引用

页码：65 / 70

页数：6

共 33 条

[1] EFFECT OF VERY HIGH-PRESSURE ON THE OPTICAL-ABSORPTION EDGE IN SOLID XE AND ITS IMPLICATION FOR METALLIZATION [J].