FORMATION OF SURFACE F-CENTERS ON CAF2/SI(111)

被引：17

作者：

CHAKARIAN, V ^{[1
]}

DURBIN, TD ^{[1
]}

VAREKAMP, PR ^{[1
]}

YARMOFF, JA ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.48.18332

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic transitions responsible for the formation of F centers at the surfaces of epitaxial CaF2 films on Si(111) have been identified via photon-stimulated desorption spectroscopy. Results for films ranging from submonolayer to bulk CaF2 indicate that excitations of the Ca 3p core level result in F+ desorption, and hence, in F-center formation, while excitations of the F 2s do not. It is proposed that this difference is due to inward nuclear motion that occurs prior to the deexcitation of the core hole.

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页码：18332 / 18335

页数：4

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