EFFECTS OF ION-IMPLANTATION ON INTERMEDIATE RANGE ORDER - IR-SPECTRA OF SILICA

被引:33
作者
MAGRUDER, RH
MORGAN, SH
WEEKS, RA
ZUHR, RA
机构
[1] FISK UNIV,DEPT PHYS,NASHVILLE,TN
[2] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN
[3] VANDERBILT UNIV,DEPT MAT SCI & ENGN,NASHVILLE,TN 37240
关键词
D O I
10.1016/0022-3093(90)90208-4
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The reflectance spectra of ion implanted SiO2 glasses has been measured from 5000 cm-1 to 400 cm-1. The silica was implanted with Ti, Cr, Mn, Fe, Cu and Bi to nominal doses ranging from 1×1015 ions/cm2 to 1.2×1017 ions/cm2 at an energy of 160 keV and currents of approximately 2.6 μA/cm2. Changes in the intensity of the 1232 cm-1 and 1015 cm-1 vibrational modes are attributed to changes in the intermediate range order (IRO) and to changes in the concentration of non-bridging oxygen (NBO) defects in the implanted layer. These changes are ion and dose dependent. The differing effects on IRO and NBO are attributed to the chemical interaction of the implanted ions with the substrate. © 1990.
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页码:241 / 249
页数:9
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