ELECTROLUMINESCENCE IN ANTHRACENE CRYSTALS CAUSED BY FIELD-INDUCED MINORITY-CARRIERS AT MODERATE TEMPERATURES

被引：15

作者：

HWANG, W ^{[1
]}

KAO, KC ^{[1
]}

机构：

[1] UNIV MANITOBA, ELECT ENGN DEPT, MAT RES LAB, WINNIPEG, MANITOBA, CANADA

来源：

JOURNAL OF CHEMICAL PHYSICS | 1973年 / 58卷 / 08期

关键词：

D O I：

10.1063/1.1679685

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：3521 / 3522

页数：2

共 26 条

[1] INJECTION-DETERMINED DARK-CURRENTS IN ANTHRACENE SINGLE CRYSTALS [J].

BECKER, G ;

RIEHL, N ;

BAESSLER, H .

PHYSICS LETTERS, 1966, 20 (03) :221-&

[2]

Brodzeli M. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P954

[3]

DRESNER J, 1969, RCA REV, V30, P322

[4] ANTHRACENE ELECTROLUMINESCENT CELLS WITH TUNNEL-INJECTION CATHODES [J].

DRESNER, J ;

GOODMAN, AM .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11) :1868-&

[5] TRIPLET EXCITION-TRAPPED HOLE INTERACTION IN ANTHRACENE CRYSTALS [J].

ERN, V ;

BOUCHRIHA, H ;

FOURNY, J ;

DELACOTE, G .

SOLID STATE COMMUNICATIONS, 1971, 9 (14) :1201-+

[6] EXCIMER AND DEFECT STRUCTURE FOR ANTHRACENE AND SOME DERIVATIVES IN CRYSTALS THIN FILMS AND OTHER FILMS AND OTHER RIGID MATRICES [J].

FIELDING, PE ;

JARNAGIN, RC .

JOURNAL OF CHEMICAL PHYSICS, 1967, 47 (01) :247-&

[7] SPACE-CHARGE-LIMITED CURRENT INSTABILITIES IN N+-PI-N+ SILICON DIODES [J].

HAGENLOCHER, AK ;

CHEN, WT .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) :533-+

[8] FLUORESCENCE AND DEFECT FLUORESCENCE OF ANTHRACENE AT 4.2 DEGREES K [J].

HELFRICH, W ;

LIPSETT, FR .

JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (12) :4368-&

[9] TRANSIENTS OF VOLUME-CONTROLLED CURRENT AND OF RECOMBINATION RADIATION IN ANTHRACENE [J].

HELFRICH, W ;

SCHNEIDER, WG .

JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (08) :2902-+

[10] RECOMBINATION RADIATION IN ANTHRACENE CRYSTALS [J].

HELFRICH, W ;

SCHNEIDE.WG .

PHYSICAL REVIEW LETTERS, 1965, 14 (07) :229-&

← 1 2 3 →