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A PROPOSAL AND NUMERICAL-SIMULATION OF N+NN+ SCHOTTKY DEVICE FOR BALLISTIC AND QUASI-BALLISTIC ELECTRON-SPECTROSCOPY

被引：17
作者：
HESTO, P
PONE, JF
CASTAGNE, R
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 05期
关键词：
D O I：
10.1063/1.93119
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：405 / 406
页数：2
相关论文
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[3]   VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING [J].
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[4]   TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].
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[5]   NEAR BALLISTIC ELECTRON-TRANSPORT IN GAAS DEVICES AT 77-DEGREES-K [J].
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