CBE GROWTH OF ALGAAS/GAAS HETEROSTRUCTURES AND THEIR DEVICE APPLICATIONS

We demonstrate that the chemical beam epitaxial (CBE) technique is suitable for growing high quality AlGaAs/GaAs heterostructures for high-speed and photonic device applications. Substantial improvements in electrical and optical properties of AlxGa1-xAs were achieved using triisobutylaluminum (TIBAl) instead of triethylaluminum source. Highly uniform AlxGa1-xAs:Si and AlxGa1-xAs:C films with very low surface defect density were grown. The electrical and optical properties of these materials are comparable to those of high quality organometallic vapor phase epitaxial (OMVPE) AlxGa1-xAs. CBE grown 0.25 °m gate length modulation-doped field effect transistors (MODFET) have been fabricated. MODFETs having fT greater than 38 GHz and a 1.7 dB noise figure with 10 dB associated gain at 18 GHz are reported. Device quality AlGaAs/GaAs heterojunction bipolar transistor (HBT), electro-optic modulator and light emitter array structures grown by CBE technique were also demonstrated. © 1990.