A WEAK BOND DANGLING BOND CONVERSION MODEL FOR LIGHT-INDUCED DEFECTS IN A-SI-H

被引：8

作者：

SANTOS, PV

JACKSON, WB

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA 94304

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80091-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The kinetics of light induced defect generation was investigated by light soaking experiments (i) under constant photocurrent and (ii) at low temperatures and under constant illumination intensity. For constant density of photogenerated carriers, the rate of defect formation decreases as more defects are formed, indicating the existence of a distribution of defect formation energies in the amorphous network.

引用

页码：203 / 206

页数：4

共 5 条

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