SIGE/SI QUANTUM-WELLS WITH ABRUPT INTERFACES GROWN BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION

被引：5

作者：

GRUTZMACHER, DA ^{[1
]}

SEDGWICK, TO ^{[1
]}

SCANDELLA, L ^{[1
]}

ZASLAVSKY, A ^{[1
]}

POWELL, AR ^{[1
]}

IYER, SS ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

VACUUM | 1995年 / 46卷 / 8-10期

关键词：

D O I：

10.1016/0042-207X(95)00079-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atmospheric pressure chemical vapor deposition has been used to grow SiGe/Si quantum well structures on (001) oriented Si substrates. SiCl2H2 and GeH4 were used as reactive gases in a H-2 atmosphere. The hydrogen ambient is shown to greatly facilitate the deposition of quantum wells with abrupt interfaces in the temperature range of 550-750 degrees C. The interface roughness is determined to be less than two monolayers, as shown by X-ray reflectivity, X-ray diffractometry data and the characteristics of resonant tunnel diodes showing a peak to valley ratio of 4.2. Photoluminescence spectra with resolved lines of no-phonon and phonon assisted recombination processes are observed.

引用

页码：947 / 950

页数：4

共 23 条

[1]

[Anonymous], COMMUNICATION

[2] SI-GE ALLOYS - GROWTH, PROPERTIES AND APPLICATIONS [J].

ARIENZO, M ;

IYER, SS ;

MEYERSON, BS ;

PATTON, GL ;

STORK, JMC .

APPLIED SURFACE SCIENCE, 1991, 48-9 :377-386

[3]

Benziger J.B., 1991, METAL SURFACE REACTI, P53

[4]

BURGHARTZ JN, 1993, 1993 P BCTM, P55

[5]

DEVELYN MP, 1991, J CHEM PHYS, V96, P852

[6]

EBERL K, 1987, J PHYS C SOLID STATE, V5, P329

[7] SELF-LIMITATION IN THE SURFACE SEGREGATION OF GE ATOMS DURING SI MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

FUKATSU, S ;

FUJITA, K ;

YAGUCHI, H ;

SHIRAKI, Y ;

ITO, R .

APPLIED PHYSICS LETTERS, 1991, 59 (17) :2103-2105

[8] INTERACTION OF H2O WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J].

GHIDINI, G ;

SMITH, FW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2924-2928

[9] GE SEGREGATION IN SIGE/SI HETEROSTRUCTURES AND ITS DEPENDENCE ON DEPOSITION TECHNIQUE AND GROWTH ATMOSPHERE [J].

GRUTZMACHER, DA ;

SEDGWICK, TO ;

POWELL, A ;

TEJWANI, M ;

IYER, SS ;

COTTE, J ;

CARDONE, F .

APPLIED PHYSICS LETTERS, 1993, 63 (18) :2531-2533

[10] VERY NARROW SIGE/SI QUANTUM-WELLS DEPOSITED BY LOW-TEMPERATURE ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION [J].

GRUTZMACHER, DA ;

SEDGWICK, TO ;

NORTHROP, GA ;

ZASLAVSKY, A ;

POWELL, AR ;

KESAN, VP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :1083-1088

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