PRELIMINARY INVESTIGATION OF A BISMUTH TITANATE MEMORY

被引：10

作者：

LUKE, TE

机构：

[1] Advanced Electronics Devices Branch, Air Force Avionics Laboratory, Wright-Patterson AFB, Dayton, Ohio

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 06期

关键词：

D O I：

10.1109/T-ED.1969.16802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design considerations and initial experimental results are presented for a photo photoconductor-ferroelectric memory scheme employing monoclinic bismuth titanate as the ferroelectric. Photoconductor access during writing has been achieved, and the nondestructive optical READ capability of bismuth titanate has been demonstrated. These results indicate that by means of such a device, a completely optically accessed memory plane is possible. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：576 / &

共 7 条

[1] ELECTRICAL AND OPTICAL PROPERTIES OF FERROELECTRIC BI4TI3O12 SINGLE CRYSTALS [J].