AMORPHOUS CHROMIUM-SILICON - MATERIAL FOR KILO-OHM SHEET RESISTANCES

被引:24
作者
HIEBER, K
机构
[1] Forschungslaboratorien der Siemens AG, 8000 München 83
关键词
D O I
10.1016/0040-6090(79)90178-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
On investigating the relationship between the composition, structure and electrical properties of sputtered Cr-Si films we found a highly stable material (mole fraction of silicon, 57 ± 7%) with a resistivity of 580 ± 50 μΩ cm and a temperature coefficient of resistivity (TCR) of -80 to -130 ppm K-1. Using the same target but with a substrate temperature during deposition of about 400°C and with an oxygen partial pressure of about 10-1 N m-2, it was possible to produce films with a resistivity of up to 11 000 μΩ cm and with a TCR of less than -300 ppm K-1. Electron diffraction patterns of the films showed an amorphous structure. To confirm the stability and reproducibility of the material several hundred films (thickness, 28 nm) were produced. The change ΔR/R in the resistance of these films (without preheating in air and without using a protective layer) after annealing in air at 150°C for 250 h was less than 1%. © 1979.
引用
收藏
页码:353 / 357
页数:5
相关论文
共 2 条
[1]  
HEID K, 1973, SOLID STATE TECHNOL, V16, P56
[2]   STRUCTURAL AND ELECTRICAL-PROPERTIES OF CRSI2 THIN-FILM RESISTORS [J].
HIEBER, K ;
DITTMANN, R .
THIN SOLID FILMS, 1976, 36 (02) :357-360