EFFECT OF NOISE ON ACTIVE-MODE LOCKING OF A DIODE-LASER

被引：36

作者：

HAUS, HA ^{[1
]}

HO, PT ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1979年 / 15卷 / 11期

关键词：

D O I：

10.1109/JQE.1979.1069921

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mode locking of semiconductor lasers as influenced by spontaneous emission is investigated. The magnitude of the spontaneous emission is determined from the number of axial modes above the half-power level of the free-running diode below and near threshold. A formula is developed which relates this noise source to that of the diode in an external resonator. It is shown that, without bandwidth limiting, the noise is large enough to impede mode locking. The SHG trace of a diode with no antireflection coating, mode locked in an external resonator, is predicted and compared with experiment. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：1258 / 1265

页数：8

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