CONCENTRATION DEPENDENT MOBILITY OF 2-DIMENSIONAL ELECTRON-GAS IN GAAS/AIGAAS HETEROSTRUCTURE

被引：7

作者：

GORCZYCA, I

SKIERBISZEWSKI, C

LITWINSTASZEWSKA, E

SUSKI, T

KRUPSKI, J

PLOOG, K

机构：

[1] Unipress, Polish Acad. of Sci., Warsaw

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 06期

关键词：

19;

D O I：

10.1088/0268-1242/6/6/008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-pressure freezeout of electrons onto metastable states of a Si donor, as well as the persistent photoconductivity method were used to tune the concentration of a two-dimensional electron gas n2DEG in a GaAs/AlGaAs heterostructure. This made the measurement of the temperature dependence of the 2DEG mobility possible in a wide range of n2DEG values, even though this was applied to only one sample. Consequently, it enabled the determination of various contributions to 2DEG mobility and in particular the separation of the acoustic phonon scattering from other scattering mechanisms. The above procedure leads to the determination of the deformation potential and points out its screening by free carriers. This screening is well described by the random phase approximation. The resulting conduction band deformation potential was found to be 12.5 +/- 0.5 eV.

引用

页码：461 / 464

页数：4

共 19 条

[1]

Walukiewicz W, Ruda HE, Lagowski J, Gatos HC, Phys. Rev., 30, 8, (1984)

[2]

Wolfe EM, Stillman GE, Lindley WT, J. Appl. Phys., 41, 7, (1970)

[3]

Pfeffer P, Gorczyca I, Zawadzki W, Solid State Commun., 51, 3, (1984)

[4]

Mendez EE, Price PJ, Heiblum M, Appl. Phys. Lett., 45, 3, (1984)

[5]

Lin BJF, Tsui DC, Weimann G, Solid State Commun., 56, 3, (1985)

[6]

Hirakawa K, Sakaki H, Appl. Phys. Lett., 49, 14, (1986)

[7]

Vinter B, Phys. Rev., 33, 8, (1986)

[8]

Martin SJ, Artaki M, Emanuel MA, Coleman JJ, Hess K, Phys. Rev., 35, 17, (1987)

[9]

Konczewicz L, Litwin-Staszewska E, Maslowska A, Piotrzkowski R, Robert JL, Andre JP, Investigation of Electron Mobility in a Two-Dimensional Electron Gas. GaAs–AlxGa1−xAs Heterostructures, Application of the Hydrostatic Pressure Method, physica status solidi (b), 157, 2, (1990)

[10]

Suski T, Litwin-Staszewska E, Wisniewski P, Dmowski L, Zhuang WH, Liang GB, Sun DZ, Zen YP, J. Appl. Phys., 63, 7, (1988)

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