ELECTRICAL NOISE AND VLSI INTERCONNECT RELIABILITY

被引：49

作者：

CHEN, TM

YASSINE, AM

机构：

[1] Noise and Reliability Research Laboratory, Electrical Engineering Department, University of South Florida, Tampa, FL.

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 11期

关键词：

D O I：

10.1109/16.333837

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the characteristics of noise sources in Al-based thin films and their relationships to VLSI reliability. Techniques of applying noise measurements in detecting existing defects/damages in the films, determining electromigration activation energy, and predicting the time to failure of VLSI interconnects are presented. The noise measurement technique can be applied to wafer-level reliability testing because it is much faster than the conventional MTF method and is nondestructive in nature. Some important considerations for wafer-level reliability testing via noise measurements are also presented in this paper.

引用

页码：2165 / 2172

页数：8

共 31 条

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