SILICON BAND-STRUCTURE CALCULATIONS BY THE SELF-CONSISTENT CRYSTALLINE ORBITAL METHOD

被引:5
作者
FILONOV, AB [1 ]
TRALLE, IE [1 ]
PETROV, GV [1 ]
BORISENKO, VE [1 ]
机构
[1] BYELARUSSIAN ACAD SCI, INST PHYSICOTECH, MINSK 220730, BELARUS
关键词
D O I
10.1088/0965-0393/3/1/004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present an improved calculation scheme with complete charge and configuration self-consistency to eliminate any fitting parameters in electronic property calculation for periodical structures. Within the semiempirical crystalline orbital method with the extended Huckel one-electron Hamiltonian, band structure calculations for silicon were performed. The calculated indirect band gap value is the best in accuracy among those predicted by semiempirical and ab initio LCAO methods.
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页码:45 / 52
页数:8
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