INFLUENCE OF INTERFACE PHONONS ON INTERSUBBAND SCATTERING IN ASYMMETRIC COUPLED QUANTUM-WELLS

被引：20

作者：

EDUCATO, JL

LEBURTON, JP

BOUCAUD, P

VAGOS, P

JULIEN, FH

机构：

[1] CTR CPDS SEMICOND MICROELECTR,URBANA,IL 61801

[2] UNIV ILLINOIS,URBANA,IL 61801

[3] UNIV PARIS 11,INST ELECTR FONDAMENTALE,F-91405 ORSAY,FRANCE

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.47.12949

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A theoretical investigation of intersubband transitions in asymmetric coupled GaAs-AlxGa1-xAs quantum wells is presented in order to understand the role of interface phonons on intersubband scattering times estimated from photoluminescence up-conversion. Photoexcited carrier behavior is analyzed in relation to recent measurements and shows time constants for electron relaxation in agreement with experimental data. We show that interface modes are vital to intersubband relaxation in these structures.

引用

页码：12949 / 12952

页数：4

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