MANGANESE-DOPED GAAS1-XPX IN THE COMPOSITIONAL RANGE 0.25 LESS-THAN X LESS-THAN 1

We have investigated the internal transition 4T1-6A1 of Mn2+ in GaAs1-xPx in the compositional range 0.25 < x < 1 by photoluminescence and photoluminescence excitation spectroscopy. The observed shift of the internal transition to higher energies with decreasing phosphorus content is explained by crystal field effects. The radiative lifetime of the internal transition changes from 1 ms in GaP to approximately 0.2 ms in the sample with x = 0.25. The decrease of the integrated intensity of the internal transition with temperature is due to the emission of holes into the valence band. The photoluminescence excitation experiments indicate an efficient excitation of the internal transition only by above-bandgap excitation. A level scheme for Mn in GaAs1-xPx is proposed which explains the excitation and recombination process of the internal 4T1- 6A1 transition of Mn2+ in GaAs1-xPx.