SELENIUM PRECIPITATION IN ZNSE CRYSTALS GROWN BY PHYSICAL VAPOR TRANSPORT

被引：7

作者：

CHEN, KT

GEORGE, MA

ZHANG, Y

BURGER, A

SU, CH

SHA, YG

GILLIES, DC

LEHOCZKY, SL

机构：

[1] FISK UNIV,CTR PHOTON MAT & DEVICES,DEPT PHYS,NASHVILLE,TN 37208

[2] NASA,GEORGE C MARSHALL SPACE FLIGHT CTR,SPACE SCI LAB,HUNTSVILLE,AL 35812

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 147卷 / 3-4期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1016/0022-0248(94)00733-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The morphology of freshly cleaved ZnSe surfaces was investigated by atomic force microscopy and the results were correlated with differential scanning calorimetry (DSC) data. Selenium precipitates in undoped ZnSe crystals grown by the physical vapor transport method were determined. The Se inclusions have a size of about 20 nm. A transition temperature at 221 degrees C in the DSC measurement is interpreted as the eutectic temperature of Se-saturated ZnSe. The total amount of the ZnSe/Se-rich second phase was 0.8 wt%, and some segregation effect along low angle grain boundaries was evident.

引用

页码：292 / 296

页数：5

共 18 条

[1]

AIGRAIN P, 1961, TABLE CONSTANTES SEM

[2]

AZOULAY M, 1993, J VAC SCI TECHNOL B, V11, P5

[3]

AZOULAY M, 1993, J VAC SCI TECHNOL B, V11, P1

[4] MATERIALS GROWTH AND ITS IMPACT ON DEVICES FROM WIDE BAND-GAP II-VI COMPOUNDS [J].