HIGH-FREQUENCY MODULATION OF ALGAAS/GAAS LASERS GROWN ON SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

CHEN, HZ

PASLASKI, J

YARIV, A

MORKOC, H

机构：

来源：

关键词：

D O I：

10.1063/1.99378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：605 / 606

页数：2

共 10 条

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CHEN, HZ
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[J]. OPTICS LETTERS, 1987, 12 (10) : 812 - 813
[3] LOW-THRESHOLD (APPROXIMATELY-600 A/CM2 AT ROOM-TEMPERATURE) GAAS/AIGAAS LASERS ON SI (100)
CHEN, HZ
GHAFFARI, A
WANG, H
MORKOC, H
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1320 - 1321
[4] CHEN HZ, 1987, JUN GAAS SI WORKSH M
[5] CHEN HZ, 1988, RES DEV JAN
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[7] CHEN HZ, 1987, PHOTONICS SPECTRA, V21, P36
[8] LAU KY, 1985, SEMICONDUCT SEMIMET, V22, P69
[9] AN IMPROVED TECHNIQUE FOR FABRICATING HIGH QUANTUM EFFICIENCY RIDGE WAVE-GUIDE ALGAAS/GAAS QUANTUM-WELL LASERS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09): : 1443 - 1444
[10] A GRADED-INDEX WAVE-GUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN-BEAM
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