BOLOMETRIC DETECTION OF ESR IN P-DOPED SI AT LOW TEMPERATURE

被引:12
作者
TOYODA, Y
HAYASHI, Y
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D O I
10.1143/JPSJ.29.247
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:247 / &
相关论文
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SCHMIDT J, 1966, CR ACAD SCI B PHYS, V263, P169
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SCHMITT J, 1966, J APPL PHYS, V37, P3717
[5]   ELECTRIC CONDUCTION IN PHOSPHORUS DOPED SILICON AT LOW TEMPERATURES [J].
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JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) :859-+