PHOTOEXCITED CARRIER TRANSPORT IN INGAASP/INP QUANTUM-WELL LASER STRUCTURE

被引:13
作者
MARCINKEVICIUS, S
OLIN, U
WALLIN, J
STREUBEL, K
LANDGREN, G
机构
[1] INST OPT RES,S-10044 STOCKHOLM,SWEDEN
[2] ROYAL INST TECHNOL,SEMICOND LAB,S-16440 KISTA,SWEDEN
关键词
D O I
10.1063/1.112792
中图分类号
O59 [应用物理学];
学科分类号
摘要
Measurements of photoexcited carrier transport in InGaAsP/InP graded-gap separate-confinement quantum well laser structures with a step-like profile of the graded layers are performed by time-resolved photoluminescence using upconversion. In all the investigated structures ambipolar carrier motion can be characterized by a constant velocity of (1.5 +/- 0.2) x 10(6) cm/s. The experimental results are discussed in terms of step-driven and ordinary diffusion. (C) 1994 American Institute of Physics.
引用
收藏
页码:2057 / 2059
页数:3
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