HIGHLY TRANSPARENT CHEMICALLY AMPLIFIED ARF EXCIMER-LASER RESISTS BY ABSORPTION-BAND SHIFT FOR 193 NM WAVELENGTH

被引：23

作者：

NAITO, T

ASAKAWA, K

SHIDA, N

USHIROGOUCHI, T

NAKASE, M

机构：

[1] Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, Saitvai-ku, Kawasaki, 210

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 12B期

关键词：

CHEMICALLY AMPLIFIED RESIST; ABSORPTION BAND SHIFT; ARF EXCIMER LASER; 193; NM; 0.16 MU-M L/S;

D O I：

10.1143/JJAP.33.7028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Naphthalene-containing chemically amplified resists for ArF excimer laser exposure are proposed, based on the concept of the absorption band shift by conjugation extension. Newly developed ArF excimer resists show a high transparency at 193 nm wavelength, a high sensitivity and a high contrast. The sensitivity of the resist is 150 mJ/cm(2), which is 20 times greater than that of poly(methylmethacrylate) (PMMA). Furthermore, a 0.16 mu m pattern could be successfully fabricated by an ArF excimer laser stepper with 0.55 numerical aperture (NA) projection lens.

引用

页码：7028 / 7032

页数：5