HIGH-ENERGY ION-IMPLANTATION FOR PROFILED TUB FORMATION AND IMPURITY GETTERING IN DEEP-SUBMICRON CMOS TECHNOLOGY

被引：11

作者：

JACOBSON, DC

KAMGAR, A

EAGLESHAM, DJ

LLOYD, EJ

HILLENIUS, SJ

POATE, JM

机构：

[1] AT and T Bell Laboratories, 600 Mountain Avenue, Murray Hill

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)00531-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

High energy ion implantation has been utilized to fabricate profiled tubs and to create gettering sites in deep submicron CMOS devices in bulk and epitaxial Si. The isolation and latch-up characteristics have been measured and found to be superior to those of devices in tubs fabricated by the conventional thermal drive-in method. High energy implants into bulk Si produce inferior gettering as deduced from diode leakage measurements. Iron gettering to the MeV boron implanted region has been investigated.

引用

页码：416 / 419

页数：4