MONOLITHIC INTEGRATION OF GAAS-(GAAL)AS LIGHT MODULATORS AND DISTRIBUTED-BRAGG-REFLECTOR LASERS

被引：12

作者：

SHAMS, MK ^{[1
]}

NAMIZAKI, H ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 05期

关键词：

D O I：

10.1063/1.90033

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Integration of an intensity light modulator and a LOC-DBR laser on a single chip has been demonstrated. The injection-type modulator gives a variable loss (or gain) to the laser light, coupled to it via an interconnecting waveguide, and thus modulates its intensity in accordance with the injected current of the modulator. An extinction ratio of more than 10 was obtained.

引用

页码：314 / 316

页数：3

共 7 条

[1] FREQUENCY MULTIPLEXING LIGHT-SOURCE WITH MONOLITHICALLY INTEGRATED DISTRIBUTED-FEEDBACK DIODE-LASERS [J].